photo ic for laser beam synchronous detection high-sensitivity and high-speed photo ic for high precision printing s9684 series s11282-01ds www.hamamatsu.com 1 photo ic for precision printing high sensitivity current ampli er gain: 20 times (s9684, s11282-01ds) 6 times (s9684-01) digital output small package suitable for lead-free solder re ow photosensitive area (pd1: 2.5 0.3 mm, pd2: 2.5 0.5 mm) low voltage (3.3 v) operation (s11282-01ds) print start timing detection for laser printers, digital copiers, fax machines, etc. absolute maximum ratings parameter symbol condition value unit supply voltage vcc ta=25 c -0.5 to +7 v power dissipation * 1 p ta=25 c 300 mw output voltage * 2 vo ta=25 c -0.5 to +7 v output current io ta=25 c 5 ma ro 1 , ro 2 terminal current i ro ta=25 c 3ma operating temperature topr -25 to +80 c storage temperature tstg -40 to +85 c re ow soldering conditions * 3 tsol peak temperature 240 c, 1 time - * 1: power dissipation decreases at a rate of 4 mw/c above ta=25 c * 2: vcc=+0.5 v or less * 3: jedec level 5a note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. the s9684 series and s11282-01ds photo ic use a dual-element si pin photodiode and compare the two signals to ob- tain a highly stable output even when laser power or ambient temperature uctuates. the current ampli er is available with two gain levels (6 times and 20 times) according to laser power to be used. the s11282-01ds operates at a low voltage (3.3 v) compatible with low-voltage peripheral components. hamamatsu also provides single-element si pin photodiode types (s9703/s10317 series). features applications
photo ic for laser beam synchronous detection s9684 series, s11282-01ds 2 electrical and optical characteristics [ta=25 c, =780 nm, vcc=5 v (s9684 series)/3.3 v (s11282-01ds), ro1=ro2=5.1 k , light incident angle=normal line direction 0, unless otherwise noted] parameter symbol condition min. typ. max. unit current consumption s9684 series icc no input --4 ma s11282-01ds - - 3.2 high level output voltage s9684 series v oh i oh =4 ma 4.6 - - v s11282-01ds 2.9 - - low level output voltage v ol i ol =4 ma, * 4 - - 0.3 v threshold input power s9684 p th 7.5 10 12.5 w s9684-01 26 35 44 s11282-01ds 10.5 14.5 18.5 propagation delay time variation tp p i = 10%, * 5 * 6 --5 ns rise time tr - 4 7 ns fall time tf - 4 7 ns maximum input power p i max. - - p th 8 w * 4: input power p i =45 w (s9684), 140 w (s9684-01), 43.5 w (s11282-01ds) * 5: beam diameter (1/e 2 )=55 m, scan speed=1.18 mm/ s not including jitter caused by polygon mirror nonuniformity, etc. * 6: p i =45 w center (s9684), 140 w center (s9684-01), 43.5 w center (s11282-01ds) spectral response block diagram 400 200 800 1000 1200 600 0 0.5 0.4 0.3 0.2 0.1 photosensitivity (a/w) wavelength (nm) (typ. ta=25 c) pd2 vref vcc ro2 ro2 ro1 vo gnd pd1 current amplifier current amplifier external gain resistance ro1 external gain resistance 0.1 f 5 v (s9684 series) 3.3 v (s11282-01ds) kpicb0167ea kpicc0108eb
photo ic for laser beam synchronous detection s9684 series, s11282-01ds 3 dimensional outline (unit: mm) kpica 0.5 2.5 0.3 0.67 (center of photosensitive area) 3.2 0.2 (including burr) 3.0 * 1.0 0.4 1.0 0.4 0.05 2.4 mirror area range 0.15 2.8 2.9 3.0 * 0.45 0.3 3.0 * 3.4 mirror area range 3.8 3.9 4.0 * 4.0 * 4.2 0.2 5.0 0.3 0.45 0.3 0.27 0.75 1.3 0.8 0.8 0.8 0.1 0.1 0.8 (10 ) 0.3 (10 ) 0.4 0.8 photosensitive surface tolerance unless otherwise noted: 0.1, 2 shaded area indicates burr. chip position accuracy with respect to package dimensions marked * x, y 0.2, 0 2 packing: stick (100 pcs/stick) tape-and-reel shipment is available (s9684-30/-31). vcc ro1 out gnd ro2 gnd gnd gnd gnd gnd photosensitive surface 2.5 0.5 0.3 pd2 details of photodiode pd1 kpica0056ed output waveforms of terminals 2, 3 and 5 scanning direction pd1 pd2 r o 1 r o 2 v o kpicc0131ea function these products integrate a photodiode chip and an ic chip into the same package. the photodiode chip is internally connected to the ic chip as shown in the block diagram. the products should be used with terminals ro1 and ro2 connected to an external gain resistance. two photocurrents are generated when a laser beam enters the dual-element photodiode. each photocurrent is fed to the input terminal of the ic and, after being ampli ed by the current ampli er, ows to the external gain resistance. at this time, voltages v ro1 and v ro2 at terminals ro1 and ro2 are given by the following expression. v ro1 (v ro2 )=a s p i ro1 (ro2) [v] a: current ampli er gain (s9684, s11282-01ds: 20 times, s9684-01: 6 times) s: photodiode sensitivity [a/w] (approx. 0.45 a/w at 780 nm) p i : input power [w] ro1, ro2: external gain resistance [ ]; usable range 2 k to 10 k v ro1 and v ro2 are input to the internal comparator so the output vo is "high" when v ro1 > v ro2 or "low" when v ro1 < v ro2 . note that v ro1 and v ro2 should not exceed 8 times of the voltage calculated from the threshold light level.
cat. no. kpic1056e07 feb. 2012 dn photo ic for laser beam synchronous detection s9684 series, s11282-01ds www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice du e to improvements or other reasons. before assembly into fi nal products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of february, 2012. 4 recommended temperature pro le of re ow soldering (typical example) kpicb0164ea preheat time 70 to 90 s soldering time 40 s max. 190 c time te m p e ra t u re 240 c max. 220 c 170 c after unpacking, store this device in an environment at a temperature of 5 to 25 c and a humidity below 60%, and perform re ow soldering on this device within 24 hours. thermal stress applied to the device during re ow soldering differs depending on the pc boards and re ow oven being used. when setting the re ow conditions, make sure that the re ow soldering process does not degrade device reliability. a sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 c per second.
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